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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD363 description c ollector-emitter breakdown voltage- : v (br)ceo = 120v(min) collector power dissipation- : p c = 40w(max)@ t c = 25 applications designed for b/w tv horizontal def lection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 8 v i c collector current-continuous 6 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD363 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 20ma; i b = 0 120 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 300 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 8 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.1a b 1.0 v v be (sat) base-emitter saturation voltage i c = 1a; i b = 0.1a b 1.5 v i cbo collector cutoff current v cb = 250v; i e = 0 1.0 ma h fe dc current gain i c = 1a; v ce = 5v 40 240 f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 10 mhz ? h fe classifications r o y 40-80 70-140 120-240 isc website www.iscsemi.cn 2 |
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